High-K gate dielectrics

Wen-Jie Qi; Byoung Hun Lee; Renee Nieh; LaeGu Kang; YongJoo Jeon; Katsu Onishi; Jack C. Lee

doi:10.1117/12.360537

1 September 1999 High-K gate dielectrics

Wen-Jie Qi, Byoung Hun Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, Jack C. Lee

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360537
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO₂ or HfO₂ thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics. Equivalent oxide thickness as thin as 9 angstrom with leakage current of about 10^-2 A/cm² was achieved. This is the lowest EOT value ever reported for ZrO₂ and HfO₂ thin films. Low charge- trapping, high breakdown field, and negligible stress- induced leakage currents have also been obtained.

Citation Download Citation

Wen-Jie Qi, Byoung Hun Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, and Jack C. Lee "High-K gate dielectrics", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360537

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