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1 September 1999 New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices
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Abstract
A new high performance silicon complementary bipolar technology is introduced. In addition a novel process 'enhancement' technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricate. We propose that the technique we have used will allow specific transistors within a circuit to be optimized, as required.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin C. Wilson, Peter H. Osborne, Simon Thomas, and Trevor Cook "New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360538
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