1 September 1999 Optimization of a wet-patterning bottom antireflective i-line coating for both poly gate and metal lithography processes
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Proceedings Volume 3881, Microelectronic Device Technology III; (1999); doi: 10.1117/12.360563
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States
Abstract
The work outlines a solution to two of the most common challenges from IC manufacturing: CD control at poly gate level and reflective notching on metal. These are uniquely solved using a single Bottom Anti-Reflective Coating (BARC) material, ARC-WiDE from Brewer Science. We have shown the use of wet patterning BARC can be implemented both on metal and poly level with printed feature sizes of 0.35 micrometers for ASIC processes with severe topography. Post poly etch results are presented across the BARC bake window, defined as lifting of resist on one side and 'scumming' on the other side for dense i-line lines. The analysis of cross sectioned wafers show a wide process window where the final poly CDs are independent of the degree of BARC undercut beneath 0.35 micrometers resist lines. Furthermore the results of matching of a g-line process to an i-line process with the same BARC as for poly are included. This feature makes the wet patterning mode an attractive and cost effective alternative to dry patterned BARCs where the modification of the etch process is necessary, potentially affecting throughput.
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Hubert Enichlmair, Oliver Stelmaszyk, Paul Williams, "Optimization of a wet-patterning bottom antireflective i-line coating for both poly gate and metal lithography processes", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360563; https://doi.org/10.1117/12.360563
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KEYWORDS
Etching

Metals

Optical lithography

Reflectivity

Semiconducting wafers

Coating

Lithography

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