Photoelectric characteristics of inhomogeneous MOS silicon-based structures

Aleksander V. Voitsekhovskii; Sergey N. Nesmelov

doi:10.1117/12.360565

1 September 1999 Photoelectric characteristics of inhomogeneous MOS silicon-based structures

Aleksander V. Voitsekhovskii, Sergey N. Nesmelov

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360565
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The abnormal photoelectric properties of Si-MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrate and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.

Citation Download Citation

Aleksander V. Voitsekhovskii and Sergey N. Nesmelov "Photoelectric characteristics of inhomogeneous MOS silicon-based structures", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360565

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