1 September 1999 UHF2: a 0.6-μm 25-GHz BiCMOS technology for mixed-signal wireless communications applications
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Abstract
A 0.6 micrometers RF BiCMOS technology was developed by the modular integration of a 25 GHz fT, 35 GHz fMAX NPN transistor and high-quality passive components into an existing 0.6 micrometers analog CMOS process. The resultant process technology supports low-cost, mixed-signal RF applications up to 2.5 GHz.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Don Hemmenway, Don Hemmenway, Frank Baldwin, Frank Baldwin, John D. Butler, John D. Butler, Clay Crouch, Clay Crouch, Jose Delgado, Jose Delgado, Mike Jayne, Mike Jayne, Jeffrey M. Johnston, Jeffrey M. Johnston, Rex Lowther, Rex Lowther, Michael Netzer, Michael Netzer, Susan Richmond, Susan Richmond, Anthony Rivoli, Anthony Rivoli, George Rouse, George Rouse, Ron Santi, Ron Santi, Yun Yue, Yun Yue, } "UHF2: a 0.6-μm 25-GHz BiCMOS technology for mixed-signal wireless communications applications", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360571; https://doi.org/10.1117/12.360571
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