Asymmetric alignment mark compensation

John D. Rose; Alejandro Velez; Shephen Berger

doi:10.1117/12.361295

3 September 1999 Asymmetric alignment mark compensation

John D. Rose, Alejandro Velez, Shephen Berger

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361295
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Metal deposition equipment typically sputter more from the center of the target than the edge. Features on the wafer can cause a shadowing effect where the metal accumulates on the surfaces that are more incident. This will result in an apparent image shift if viewed from the top. The misplacement will be minimized near the center of the wafer and will be worse toward the edge. Since the actual position of the alignment mark is not visible, only the misplaced image as viewed from the metal covering the mark, direct inline alignment measurement is not possible with optical or SEM methods. Cross sections show that the misplacement is linear and symmetric about the wafer center and takes the form of a scaling misalignment. When overlay is measured on a wafer using traditional means, the scaling correction is added mathematically to the data to compensate for the inability of the tool to measure the actual alignment. Using this technique, standard overlay tools can be used to measure alignment on opaque films.

Citation Download Citation

John D. Rose, Alejandro Velez, and Shephen Berger "Asymmetric alignment mark compensation", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361295

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