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3 September 1999 Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing
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Abstract
The TiCl4 based CVD-Ti process has been identified as the candidate of choice for the advanced contact metallization. A BKM wet clean recovery (WCR) procedure, involving extended chamber seasoning, has been developed for the CVD-Ti process. The new WCR methodology takes only 5 wafer processing to stabilize the CVD-Ti chamber condition and film properties. It has been found that a chamber seasoning for 200 sec, performed after every idle time (greater than 15 min.) and thermal periodic clean (at wafer count # 200), helps to maintain the CVD-Ti process performance. The reliability of the new chamber operating procedures was validated through a successful 3000 wafer marathon demonstration.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohan Bhan, Fred H. Wu, R. A. Srinivas, Brian Metzger, Zvi Lando, Murali K. Narasimhan, and Fusen E. Chen "Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361307
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