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3 September 1999 Characterization of various Ti-Al film alloys as wafer temperature metrology systems
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Abstract
Of the various techniques used to monitor wafer temperature during hot metal sputter deposition, use of wafers with Ti/Al alloy film stacks provides high consistency, run-to-run repeatability, good temperature sensitivity, and ease of use in a production factory. This work details the development of improved Ti/Al temperature monitor wafers for use on hot metal physical vapor deposition (PVD) systems. Various combinations of (1) Ti, TiW, and AlCu alloys, and (2) varying thickness of each metal layer were ran at three different heater temperature setpoints on an Applied Materials Endura 5500 PVD system. The experimental design is discussed and the temperature sensitivities are analyzed for each Ti/Al film stack combination and subsequently compared to the standard Ti/Al alloy monitor performance. The correct combination of AlCu film alloy and AlCu film thickness resulted in a monitor three times more sensitive than the existing Ti/Al monitor.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brad M. Axan "Characterization of various Ti-Al film alloys as wafer temperature metrology systems", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361317
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