3 September 1999 IC yield enhancement through optimization of photolithography pattern at the isolation step
Author Affiliations +
Abstract
The yield of an oxide isolated bipolar technology was substantially enhanced by changing the photolithography processing at the isolation layer. Changing the exposure bias improved the Cpk by 25% and the yield by 6%. Changing to a different develop chemistry eliminated corner defects and substantially reduced fallout for leakage. Corner defects are correlated to microgrooves and protuberances in the photoresist profile. In this paper, the mechanism for the yield improvement is explained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kerry J. Nagel, Kerry J. Nagel, Steve Spivey, Steve Spivey, Ping Wang, Ping Wang, } "IC yield enhancement through optimization of photolithography pattern at the isolation step", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361322; https://doi.org/10.1117/12.361322
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

193-nm lithography: new challenges, new worries
Proceedings of SPIE (April 27 1999)
Advanced dry etching for oxide deep trench
Proceedings of SPIE (January 14 2003)
Negative tone 193-nm photoresists
Proceedings of SPIE (June 11 2003)

Back to Top