Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond

Hyeon-Sang Shin; Myung-Pil Kim; Jin-Woong Kim; YilWook Kim; Il-Hyun Choi

doi:10.1117/12.361306

3 September 1999 Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond

Hyeon-Sang Shin, Myung-Pil Kim, Jin-Woong Kim, YilWook Kim, Il-Hyun Choi

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361306
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

A chemically assisted physical etching has been developed for the patterning of the Pt electrode with Cl₂/Ar Plasma. Cl₂ plasma performs a very special role which leads to a fence free Pt etching with the highly steep profile. It was found that Pt-Cl compounds on the etch residue were detected by x-ray photoelectron spectroscopy (XPS) and optical emission spectroscopy (OES), which means Cl₂ plasma could generate a chemical reaction during the Pt etching. The hard mask based Pt etch process confirms that a very fine 0.15 micrometer l/s pattern could be achieved with less than 0.05 micrometer CD bias, fence free and the nearly vertical profile. And also, BST capacitors with an optimized Pt electrode shows less than 1fA/cell leakage current at 1 V and it is enough value for the application to 1 Gb DRAM and beyond.

Citation Download Citation

Hyeon-Sang Shin, Myung-Pil Kim, Jin-Woong Kim, YilWook Kim, and Il-Hyun Choi "Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361306

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