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Influence of IMP copper flash layer on the properties of copper films deposited by metal organic chemical vapor deposition
Capping layers, cleaning method, and rapid thermal processing temperature on cobalt silicide formation
Ultrathin integrated ion metal plasma titanium and metallorganic titanium nitride liners for sub 0.18 μm W based metallization schemes for >500 MHz microprocessors
Comparing the electrical characteristics and reliabilities of BJTs and MOSFETs between Pt and Ti contact silicide processes