Paper
11 August 1999 Enabling and cost-effective TiCl4-based PECVD Ti and CVD TiN processes for gigabit DRAM technology
Sri Srinivas, Ming Xi, Brian Metzger, Zvi Lando, Murali K. Narasimhan, Fusen E. Chen
Author Affiliations +
Abstract
This paper discusses TiCl4 based PECVD Ti and CVD TiN processes that enable a critical contact technology for cost effective gradient DRAMs. The PECVD Ti contact silicidation process and the CVD TiN barrier process together allow for reliable contact metallization with excellent contact resistance and leakage current performance for aspect ratios >12:1. Such capability has allowed a substantial increase in capacitor height alleviating the need for either a change in the capacitor dielectric as well as allowing the continuation of the bitline over capacitor metallization architecture. In addition, the in-situ silicidation capability of the PECVD Ti process allows for the elimination of the contact silicidation anneal step. When used as the top electrode in Ta2O3 based capacitor structures, TiCl4 based CVD TiN provides for reliable metallization with excellent leakage current performance. Preliminary results show that CVD TiN provides the capability for a complete plug fill with no peeling or cracking.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sri Srinivas, Ming Xi, Brian Metzger, Zvi Lando, Murali K. Narasimhan, and Fusen E. Chen "Enabling and cost-effective TiCl4-based PECVD Ti and CVD TiN processes for gigabit DRAM technology", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360581
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KEYWORDS
Tin

Chemical vapor deposition

Titanium

Plasma enhanced chemical vapor deposition

Capacitors

Resistance

Chlorine

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