ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric films

David T. Hsu; Hyungkun Kim; Frank G. Shi; Bin Zhao; Maureen R. Brongo; P. Schilling; Shi-Qing Wang

doi:10.1117/12.360588

11 August 1999 ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric films

David T. Hsu, Hyungkun Kim, Frank G. Shi, Bin Zhao, Maureen R. Brongo, P. Schilling, Shi-Qing Wang

Proceedings Volume 3883, Multilevel Interconnect Technology III; (1999) https://doi.org/10.1117/12.360588
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Thermal stability is a critical issue for polymer thin films being used as interlevel dielectrics (ILDs) in deep- submicron multilevel interconnection. One of crucial parameters to predict thermal stability is the glass transition temperature (T_g). Unfortunately the glass transition in polymer thin films is still not clearly understood. In this work, a simple model is developed for the thickness dependence of T_g of polymer thin and ultrathin films. It is predicted that T_g of polymer thin films can either be reduced or enhanced in comparison with its bulk values, depending on the polymer-substrate and polymer-surface interactions. In addition, the thickness- dependent T_g of polymer thin films can exhibit a minimum as a function of thickness. Experimental data from technologically important ILD films are obtained to support the theoretical model.

Citation Download Citation

David T. Hsu, Hyungkun Kim, Frank G. Shi, Bin Zhao, Maureen R. Brongo, P. Schilling, and Shi-Qing Wang "ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric films", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360588

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