11 August 1999 Novel metallization scheme using nitrogen passivated Ti liner for AlCu-based metallization
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Abstract
In many fabs for quarter micron and below technologies a stack consisting of Ti/TiN/AlCu/TiN or Ti/AlCu/TiN is being used for metallization. A new approach for metal stack deposition of 0.25 micrometers and beyond, utilizing hew design rules, has been used for DRAM processes. The novel metal deposition process uses an insitu nitrogen purge directly after deposition of bottom Ti to achieve a passivation of the Ti with a thin nitride before deposition of AlCu. This novel approach has been compared to standard metallization stacks consisting of Ti/AlCu/TiN and Ti/TiN/AlCu/TiN.
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Sven Schmidbauer, Sven Schmidbauer, Stefan Spinler, Stefan Spinler, M. U. Lehr, M. U. Lehr, J. Klotzsche, J. Klotzsche, J. Hahn, J. Hahn, } "Novel metallization scheme using nitrogen passivated Ti liner for AlCu-based metallization", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360582; https://doi.org/10.1117/12.360582
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