Paper
27 August 1999 In-line monitoring of chemical-mechanical polishing processes
Dale L. Hetherington, David J. Stein
Author Affiliations +
Abstract
We present an overview of in-line monitoring of chemical- mechanical polishing (CMP) processes. We discuss the technical challenges and review many of the approaches that have been published. Several methods are currently under investigation including optical, thermal (pad temperature), friction (torque motor current), electrochemical, and acoustic (vibration).
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dale L. Hetherington and David J. Stein "In-line monitoring of chemical-mechanical polishing processes", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361329
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Polishing

Chemical mechanical planarization

Semiconducting wafers

Sensors

Wafer-level optics

X-ray optics

Metals

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