Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing

Y. B. Jia; Ohm Guo Pan; Long-Ching Wang; Patrick Lo; Shih-Ked Lee; Jeong Yeol Choi; James Shih

doi:10.1117/12.361349

27 August 1999 Properties of ultrathin gate oxides grown in N₂O-based oxidation ambients by rapid thermal processing

Y. B. Jia, Ohm Guo Pan, Long-Ching Wang, Patrick Lo, Shih-Ked Lee, Jeong Yeol Choi, James Shih

Proceedings Volume 3884, In-Line Methods and Monitors for Process and Yield Improvement; (1999) https://doi.org/10.1117/12.361349
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Ultra-thin gate oxides grown by rapid thermal processing in N₂O-based oxidation ambients were evaluated. Gate oxide integrity was improved by incorporating more nitrogen in the thin gate oxides and by diluting oxidation ambients in inert gases.

Citation Download Citation

Y. B. Jia, Ohm Guo Pan, Long-Ching Wang, Patrick Lo, Shih-Ked Lee, Jeong Yeol Choi, and James Shih "Properties of ultrathin gate oxides grown in N₂O-based oxidation ambients by rapid thermal processing", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361349

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