27 August 1999 Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing
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Abstract
Ultra-thin gate oxides grown by rapid thermal processing in N2O-based oxidation ambients were evaluated. Gate oxide integrity was improved by incorporating more nitrogen in the thin gate oxides and by diluting oxidation ambients in inert gases.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. B. Jia, Y. B. Jia, Ohm Guo Pan, Ohm Guo Pan, Long-Ching Wang, Long-Ching Wang, Patrick Lo, Patrick Lo, Shih-Ked Lee, Shih-Ked Lee, Jeong Yeol Choi, Jeong Yeol Choi, James Shih, James Shih, } "Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361349; https://doi.org/10.1117/12.361349
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