27 August 1999 Ultrathin gate oxide degradation under different rates of charge injection
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The quasi-static degradation will exhibit identical shifts in parameters for identical total charge injection irrespective of the rate of injection. For this paper, three different injection rates were used to inject same total charge in identical devices. Unequal shift in device parameters for each experiment indicates non-quasi-static nature of degradation. As a result, DC stressing experiments can not be used to accurately predict AC degradation. A novel method of accelerating the stress along frequency dimension is proposed and experimental results are presented. This method can predict AC degradation for any frequency using an empirical model.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pitsini Mongkolkachit, Pitsini Mongkolkachit, Bharat L. Bhuva, Bharat L. Bhuva, Sharad Prasad, Sharad Prasad, N. Bui, N. Bui, Sherra E. Kerns, Sherra E. Kerns, } "Ultrathin gate oxide degradation under different rates of charge injection", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361348; https://doi.org/10.1117/12.361348


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