27 August 1999 Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing
Author Affiliations +
Abstract
The Surface Charge Profiler (SCP) has been introduced for monitoring and development of silicon epitaxial processes. The SCP measures the near-surface doping concentration and offers advantages that lead to yield enhancement in several ways. First, non-destructive measurement technology enables in-line process monitoring, eliminating the need to sacrifice production wafers for resistivity measurements. Additionally, the full-wafer mapping capability helps in development of improved epitaxial growth processes and early detection of reactor problems. As examples, we present the use of SCP to study the effects of susceptor degradation in barrel reactors and to study autodoping for development of improved dopant uniformity.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joshua P. Tower, Joshua P. Tower, Emil Kamieniecki, Emil Kamieniecki, M. C. Nguyen, M. C. Nguyen, Adrien Danel, Adrien Danel, } "Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361332; https://doi.org/10.1117/12.361332
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top