1 February 2000 Fabrication of Nd, Cr co-doped GGG thin films for a Q-switched waveguide laser by the two-target pulsed KrF laser deposition method
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Proceedings Volume 3885, High-Power Laser Ablation II; (2000) https://doi.org/10.1117/12.376979
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
The Nd3+,Cr4+ co-doped GGG epitaxial thin films for self Q-switched waveguide laser has been fabricated by a two-target pulsed laser deposition method. Concentrations of Nd and Cr ion in Nd,Cr:GGG thin films are well adjusted by changing laser ablation fluences independently for Nd:GGG and Cr,Ca:GGG sintered targets. The structure of Nd,Cr:GGG thin films on YAG substrate shows a planar waveguide structure. It is confirmed that Nd3+ and Cr4+ ions are optically active as laser active ions and saturable absorbers around 1.06 micrometers .
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sachiyo Fukaya, Sachiyo Fukaya, Tetsu Hasegawa, Tetsu Hasegawa, Yoshihisa Ishida, Yoshihisa Ishida, Minoru Obara, Minoru Obara, } "Fabrication of Nd, Cr co-doped GGG thin films for a Q-switched waveguide laser by the two-target pulsed KrF laser deposition method", Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); doi: 10.1117/12.376979; https://doi.org/10.1117/12.376979
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