7 February 2000 Industrial large-aperture XeCl laser for surface processing
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Proceedings Volume 3888, High-Power Lasers in Manufacturing; (2000) https://doi.org/10.1117/12.377068
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
In the frame of a large project on new materials technologies for photovoltaic and microelectronic applications (FOTO), the process of amorphous silicon (a-Si) transformation into polycrystalline silicon (poly-Si) by means of laser irradiation has been tested with a long-pulse (160 ns), 8 J/p XeCl source. Following the positive results, a laser source, having design parameters of 10 J/p, 120 ns, 10 Hz, has been designed and built, with the aim of realizing a laboratory line for the production of thin film transistors (TFTs) devices.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tommaso Letardi, Tommaso Letardi, Alessandro Baldesi, Alessandro Baldesi, Sarah Bollanti, Sarah Bollanti, Francesca Bonfigli, Francesca Bonfigli, Paolo Di Lazzaro, Paolo Di Lazzaro, Francesco Flora, Francesco Flora, Gualtiero Giordano, Gualtiero Giordano, Alessandro Marinai, Alessandro Marinai, Daniele Murra, Daniele Murra, Giovanni Schina, Giovanni Schina, Cheng En Zheng, Cheng En Zheng, } "Industrial large-aperture XeCl laser for surface processing", Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); doi: 10.1117/12.377068; https://doi.org/10.1117/12.377068

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