3 April 2000 AlGaAs/InGaAs/GaAs high-power 1060-nm diode lasers with reduced fast axis divergence
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Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380931
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
We developed the separate confinement AlGaAs/InGaAs/GaAs MOCVD laser heterostructures with two quantum wells for wavelength 1060 nm. The quality of the interfaces and layers was improved by the advanced structure design and growth technology. The fundamental transverse mode operation in the direction, perpendicular to p-n junction was observed up to CW output power 2 W (the whole tested power range of the 100 mkm wide strip lasers). The measured fast axis divergence was only 20 - 25 deg. External differential efficiency of 85% and total efficiency 47% were measured at 20 deg. C. The tested efficiency of laser beam coupling to the standard 50 micrometer core fiber with a numerical aperture 0.25 at high- power operation was 82%.
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Igor Dmitrievich Zalevsky, Victor V. Bezotosny, E. I. Davidova, V. P. Koniaev, A. A. Marmaluk, Anatoliy A. Padalitsa, V. A. Shishkin, "AlGaAs/InGaAs/GaAs high-power 1060-nm diode lasers with reduced fast axis divergence", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); doi: 10.1117/12.380931; https://doi.org/10.1117/12.380931
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