Modeling high-power semiconductor lasers: from microscopic physics to device applications

Jerome V. Moloney; Miroslav Kolesik; Joerg Hader; Stephan W. Koch

doi:10.1117/12.380861

3 April 2000 Modeling high-power semiconductor lasers: from microscopic physics to device applications

Jerome V. Moloney, Miroslav Kolesik, Joerg Hader, Stephan W. Koch

Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380861
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan

Abstract

A robust, modular and comprehensive simulation model, built on a first-principles microscopic physics basis, includes the fully time-dependent and spatially resolved internal optical, carrier and temperature fields within an arbitrary geometry edge-emitting high-power semiconductor laser device. The simulator is designed to run interactively on a multi- processor shared memory graphical supercomputer by utilizing a highly efficient algorithm running in parallel over multiple CPUs. The experimentally validated semiconductor optical response is computed using a microscopic approach that includes the relevant bandstructure of the Quantum Well and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account. The latter quantity is introduced into the simulator via a multidimensional look-up table that captures the local dependence of the gain and refractive index of the structure over a broad range of frequencies and carrier densities. The simulator is designed in a modular form so as to be able to include differing device geometries (broad area, flared, multiple contacts, arrays, ..), filters (DBR or DFB grating sections), index/gain-guiding, temperature and current profiles and so on. Results will be presented for both broad area and MOPA devices.

Citation Download Citation

Jerome V. Moloney, Miroslav Kolesik, Joerg Hader, and Stephan W. Koch "Modeling high-power semiconductor lasers: from microscopic physics to device applications", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); https://doi.org/10.1117/12.380861

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