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3 April 2000 Passively Q-switched Nd:S-VAP laser with a Cr4+:YAG crystal saturable absorber
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Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380940
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
With Cr4+:YAG crystal as the saturable absorber, diode- pumped compact passively Q-switched Nd:S-VAP lasers have been demonstrated using a simple two-mirror linear cavity. When CW pumped with a 1 W high-brightness laser diode, stable laser pulses of duration of 2.9 ns and energy of 13.7 (mu) J are observed with kilohertz repetition rates. The highest peak power of 4.6 kW was obtained at an incident pump power of 904 mW.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyuan Shen, Cheng Li, Jie Song, and Ken-ichi Ueda "Passively Q-switched Nd:S-VAP laser with a Cr4+:YAG crystal saturable absorber", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); https://doi.org/10.1117/12.380940
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