Paper
3 April 2000 Performance and reliability of high-intensity AlGaAs laser arrays
Yuji Nishikawa, Hiroshi Takigawa
Author Affiliations +
Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380928
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
Changing the layer structure of the AlGaAs LD bars, the dependence of degradation on conversion efficiency and internal loss is examined in this paper. Using four kinds of LD bars mounted on the water-coolers, we measured output and aging characteristics. The internal loss estimated from the free carrier absorption has a close relationship with the degradation of the AlGaAs LD bars. On the other hand, in the region we examined, the conversion efficiency is not the dominant factor in determining the degradation. The free carrier absorption locally raises the lattice temperature and accelerates the propagation of defects in the lattice. On the other hand, the thermal power caused by the injection current uniformly raises the LD temperature and affects the local lattice in minimal manner. Therefore, the degradation dominantly depends on the internal loss.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuji Nishikawa and Hiroshi Takigawa "Performance and reliability of high-intensity AlGaAs laser arrays", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); https://doi.org/10.1117/12.380928
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KEYWORDS
Absorption

Aluminum

Reliability

Resistance

Phonons

Quantum wells

Waveguides

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