3 April 2000 Theory of angled grating semiconductor lasers: comparison of an analytical model and BPM simulation
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Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380852
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
An analysis of intensity filamentation in a broad area semiconductor laser having an optical cavity with an angled grating has been performed, using both an analytical six-wave mixing theory and beam propagation method (BPM) simulations. With the grating at the Bragg diffraction angle, the analytical theory shows that the use of the grating gives rise to lateral optical anisotropy, which suppresses filamentation of the laser radiation. For a given semiconductor laser design and operating condition, the predictions of the analytical theory are compared with those from a beam propagation method simulation. 12
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Marek Osinski, Marek Osinski, William E. Thompson, William E. Thompson, Andrew M. Sarangan, Andrew M. Sarangan, Alexander P. Bogatov, Alexander P. Bogatov, } "Theory of angled grating semiconductor lasers: comparison of an analytical model and BPM simulation", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); doi: 10.1117/12.380852; https://doi.org/10.1117/12.380852
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