Paper
4 November 1999 Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave
Alia Baidullaeva, Aleksandr I. Vlasenko, Bogdan L. Gorkovenko, Peter E. Mozol'
Author Affiliations +
Abstract
In this paper laser induced shock wave (SW) influence on defect structure modification of ZnSe crystals with different accidental impurities concentration was investigated. It was analyzed spectra of photoconductivity, thermally stimulated conductivity and temperature dependencies of dark and photocurrent of ZnSe before and after SW passing. Experimental data analysis shows that changes of physical properties of ZnSe crystals under SW passing strongly depend on accidental impurities concentration. Mechanisms of defect formation under SW passing are discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alia Baidullaeva, Aleksandr I. Vlasenko, Bogdan L. Gorkovenko, and Peter E. Mozol' "Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368394
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KEYWORDS
Crystals

Laser crystals

Absorption

Chemical species

Copper

Semiconductor lasers

Data analysis

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