4 November 1999 Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K
Author Affiliations +
Abstract
Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron- hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurements with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Franc, Jan Franc, Eduard Belas, Eduard Belas, Pavel Hlidek, Pavel Hlidek, A. L. Toth, A. L. Toth, Helmut Sitter, Helmut Sitter, Roman Grill, Roman Grill, Pavel Hoeschl, Pavel Hoeschl, Pavel Moravec, Pavel Moravec, } "Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368349; https://doi.org/10.1117/12.368349
PROCEEDINGS
7 PAGES


SHARE
Back to Top