4 November 1999 Charge impurity states of In, Ga, Ge in narrow-gap PbTe
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Abstract
The XPS/XAES technique is applied to analyze the dominant electronic state of In, Ga, Ge impurities in PbTe single crystals doped above the point of Fermi level stabilization. It is shown that the effective electronic state of In impurity in PbTe can be represented as a mixture of 5s25p1 and 5s05p3 configurations, while Ga impurity atoms are present in the donor configuration 4s04p3. Oxidation state of Ge-atom is more than 2+. Vacancionic and interstitial clusters were revealed in Pb1-xInxTe by x-ray diffusive scattering method.
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Vladimir P. Zlomanov, Alexander K. Tkalich, "Charge impurity states of In, Ga, Ge in narrow-gap PbTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368348; https://doi.org/10.1117/12.368348
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