4 November 1999 Effect of laser irradiation on photoconductivity of GaAs crystals
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Purposeful changes of the photoelectric properties of GaAs crystals by irradiation with nanosecond ruby laser pulses were studied in order to obtain structures with desired physical properties. It was established that irradiation of polished GaAs crystals with laser pulses of energy density above the melting threshold increased the photoconductivity signal and decreased the recombination rate of the nonequilibrium charge carriers because of epitaxial recrystallization of the damaged surface layer. The photoconductivity of the samples with anisotropically etched surface decreased after such laser irradiation. The resistivity of irradiated GaAs crystals decreased because of formation of shallow donor centers. The reasons for these laser-stimulated phenomena were determined and the mechanism of laser irradiation was discussed. The method to improve the photoelectric parameters of GaAs crystal by means of pulsed laser irradiation is offered.
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Volodymyr A. Gnatyuk, Volodymyr A. Gnatyuk, Olena S. Gorodnychenko, Olena S. Gorodnychenko, Peter E. Mozol', Peter E. Mozol', Aleksandr I. Vlasenko, Aleksandr I. Vlasenko, "Effect of laser irradiation on photoconductivity of GaAs crystals", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368399; https://doi.org/10.1117/12.368399

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