4 November 1999 Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures
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InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.
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Ilary M. Rarenko, Ilary M. Rarenko, J. I. Vyklyuk, J. I. Vyklyuk, V. G. Deibuk, V. G. Deibuk, S. G. Dremluzhenko, S. G. Dremluzhenko, Z. I. Zakharuk, Z. I. Zakharuk, S. M. Nichyi, S. M. Nichyi, } "Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368384; https://doi.org/10.1117/12.368384

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