4 November 1999 Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors
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Abstract
We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.
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Liubomyr S. Monastyrskii, Liubomyr S. Monastyrskii, } "Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368407; https://doi.org/10.1117/12.368407
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