4 November 1999 Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field
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Abstract
Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/AlxGa1-xAs quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation.
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I. A. Fyodorov, I. A. Fyodorov, V. N. Sokolov, V. N. Sokolov, "Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368391; https://doi.org/10.1117/12.368391
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