Translator Disclaimer
4 November 1999 Impurity profile determination by the optimal parameter choice method
Author Affiliations +
Model of the influence of the shallow and deep impurity level profiles on the capacitance relaxation curves was made using the optimal parameter choice method. There were established that the shallow impurity profile decay and the deep impurity profile growth increase the dimensionless time. Besides it the shallow impurity profile growth and the deep impurity profile decay decrease. Such effects give rise the undervalue of the dimensionless capacitance (omega) for the first case and overvalue (omega) for the second one. The received expressions for increment d may be used for the quantitative estimation of the shallow and deep impurity profiles without procedure of the differentiation of the experimental C-t-curves. That permit to increase the accuracy of the impurity profile determination.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lyudmila A. Karachevtseva, Vadim D. Sobolev, and Irina K. Demina "Impurity profile determination by the optimal parameter choice method", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999);


Modeling high-frequency capacitance in SOI MOS capacitors
Proceedings of SPIE (December 21 2016)
Periodically corrugated microstrip wiring
Proceedings of SPIE (September 21 1995)
Multicomponent dielectrics for oxide TFT
Proceedings of SPIE (February 29 2012)

Back to Top