Paper
4 November 1999 Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP
Volodimir P. Tartachnik, Olexsandr M. Gontaruk, Dmytro V. Korbutiak, Anatoly M. Krajchynskyj, Anatoly P. Kudin, Vitalij Ya. Opilat, Myroslava B. Pinkovska, Olexsandr P. Shakhov
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Abstract
In the present work the results of the action of penetrating radiation on GaP structures has been studied.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volodimir P. Tartachnik, Olexsandr M. Gontaruk, Dmytro V. Korbutiak, Anatoly M. Krajchynskyj, Anatoly P. Kudin, Vitalij Ya. Opilat, Myroslava B. Pinkovska, and Olexsandr P. Shakhov "Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368417
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KEYWORDS
Diodes

Electrons

Luminescence

Crystals

Quantum efficiency

Gamma radiation

Diffusion

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