4 November 1999 Influence of uniaxial pressure on the photoionization of h-centers in semiconductors
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Photoionization cross section of holes localization on deep centers with short distance potential at their transitions to the valence band of the uniaxially deformed semiconductor like Ge has been calculated. Because of splitting both acceptor level and extremum of hole subbands, photoionization threshold splits also - four kinds of such transitions appear. While growing temperature, the alteration of population of splitted impurity states occurs. It result in changing contribution of each kind of transitions to the absorption coefficient. As deformation disturbs spherical symmetry of the problem, appreciable polarization dependence of absorption coefficient appears. The calculation is based on the general quantum mechanic formula with transition matrix element using wave function of impurity center under deformation.
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A. A. Abramov, V. I. Akimov, A. T. Dalakyan, D. A. Firsov, Victor N. Tulupenko, Fedir T. Vasko, "Influence of uniaxial pressure on the photoionization of h-centers in semiconductors", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368356; https://doi.org/10.1117/12.368356

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