4 November 1999 Low-temperature anomalies of the photomagnetic effect in p-Hg1-xCdxTe
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Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999); doi: 10.1117/12.368367
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine
Abstract
Peculiarities of anomalous photoelectromagnetic effect in p- Hg1-xCdxTe at low temperatures were observed experimentally. They can be unambiguously connected with the 'freezing out' of the holes. In this case the electron component of current becomes essential due to sharp asymmetry of the values of electron and hole mobilities. The transition of the anomalous photoelectromagnetic effect into normal one with the increase of H is connected with a decrease of effective length of a bipolar diffusion up to linear size of the space charge region.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. G. Gasan-Zade, G. A. Shepelskii, M. V. Strikha, "Low-temperature anomalies of the photomagnetic effect in p-Hg1-xCdxTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368367; https://doi.org/10.1117/12.368367
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KEYWORDS
Diffusion

Semiconductors

Oxides

Temperature metrology

Crystals

Magnetism

Polonium

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