4 November 1999 Model for a technological procedure of chemical profile etching
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A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Myhailo Y. Kravetsky, Myhailo Y. Kravetsky, Alexei V. Lyubchenko, Alexei V. Lyubchenko, A. V. Fomin, A. V. Fomin, } "Model for a technological procedure of chemical profile etching", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368409; https://doi.org/10.1117/12.368409


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