New approach to the problem of determination of optical band gap of crystals with exponential absorption edge

V. V. Bogoboyashchiy

doi:10.1117/12.368361

4 November 1999 New approach to the problem of determination of optical band gap of crystals with exponential absorption edge

V. V. Bogoboyashchiy

Author Affiliations +

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368361
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg_2-xCd_xTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.

Citation Download Citation

V. V. Bogoboyashchiy "New approach to the problem of determination of optical band gap of crystals with exponential absorption edge", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368361

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