4 November 1999 New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds
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Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)2S(Se)4 powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. I. Dovgoshey, M. I. Dovgoshey, L. M. Durdinets, L. M. Durdinets, I. E. Kacher, I. E. Kacher, Ja. V. Likhach, Ja. V. Likhach, M. Yu. Rygan, M. Yu. Rygan, } "New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368342; https://doi.org/10.1117/12.368342

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