4 November 1999 Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys
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Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999); doi: 10.1117/12.368380
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine
Abstract
In this paper galvanomagnetic properties and photoconductivity kinetics in Pb1-xGexTe alloys doped with Yb were investigated. The existing of Yb-induced level near the valence band top was established. High photosensitivity at temperature under 30 K and the effect of persistent photoconductivity at helium temperature were found. The photoconductivity kinetics revealed two types of relaxation processes: a fast one and a long duration one, that was explained assuming that doping with Yb leads to the formation of reconstructing Jahn-Teller centers in Pb1-xGexTe alloys.
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Evgenii P. Skipetrov, Natalia I. Chernova, Evgenii I. Slyn'ko, Yurii K. Vygranenko, "Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368380; https://doi.org/10.1117/12.368380
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KEYWORDS
Ytterbium

Doping

Electrons

Germanium

Group IV-VI semiconductors

Helium

Gallium

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