4 November 1999 Photoelectric and kinetic properties of PbTe(Ga) films
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The photoelectric and kinetic properties of n-PbTe(Ga) films prepare don the BaF2 and Si substrates by hot wall epitaxy technique have been investigated in the temperature T interval 4.2 divided by 300 K. The photoelectric measurements show that all photosensitive samples may be divided into two groups characterized by positive and negative photosensitivity to IR-illumination at temperatures close to 4.2 K. The kinetics of positively photosensitive films is found to be similar to the kinetics of the bulk n-PbTe(Ga) single crystals of high resistance. The photoresponse of negatively photosensitive films appears to be composed from two parts. They are the dominant negative photosensitivity and a positive photoconductivity signal characterized by significantly faster kinetics. The experimental result are discussed in terms of DX-like behavior of the impurity centers.
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Boris A. Akimov, Vladislav A. Bogoyavlenskiy, Ludmila I. Ryabova, Vyacheslav N. Vasil'kov, "Photoelectric and kinetic properties of PbTe(Ga) films", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368358; https://doi.org/10.1117/12.368358


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