4 November 1999 Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy
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Abstract
The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg1-xCdxTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.
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Aleksander V. Voitsekhovskii, Yu. A. Denisov, Andrej P. Kokhanenko, "Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368354; https://doi.org/10.1117/12.368354
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