Photoelectric properties of polycrystalline layers based on halogen-doped PbTe

Robert Tz. Bondokov; Dimitre Tz. Dimitrov; Vyacheslav A. Moshnikov; Michail F. Panov; Igor V. Saunin

doi:10.1117/12.368362

4 November 1999 Photoelectric properties of polycrystalline layers based on halogen-doped PbTe

Robert Tz. Bondokov, Dimitre Tz. Dimitrov, Vyacheslav A. Moshnikov, Michail F. Panov, Igor V. Saunin

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368362
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The preparation conditions of halogen doped (Cl,l) PbTe thin films have been studied. The influence of substrate and layer growth conditions on electrical and photoelectric properties are analyzed. The optimal regimens of growth of the initial layers are determined. Further, effective refraction coefficients of lead telluride films in dependence on the preparation methods were measured. It is estimated that the adding of halogen impurities into the charge increase the IR-sensitivity and makes possible a preparation of sensitive samples without annealing and reduces relaxation time. Besides, the data related to the interactions of a PbTe surface with an environment at room temperature testify to presence of the capture centers of a double nature.

Citation Download Citation

Robert Tz. Bondokov, Dimitre Tz. Dimitrov, Vyacheslav A. Moshnikov, Michail F. Panov, and Igor V. Saunin "Photoelectric properties of polycrystalline layers based on halogen-doped PbTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368362

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