4 November 1999 Photosensitization of CdxHg1-xTe epitaxial films by laser-induced shock wave
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Abstract
An action of powerful laser pulsed irradiation on photoelectric properties of epitaxial CdxHg1-xTe films with a cellular structure is studied. An increase in the photosensitivity of the investigated samples is attributed to the gettering and redistribution of electrically active point defects into crystal. Using the calculations of the temperature of the samples, the depth of chock wave formation and the shock wave pressure, one is shown that the shock wave, induced by nanosecond purposes of laser radiation in phenomena taking place plays the greatest role. It is confirmed by data obtained from original experiments especially carried out.
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Volodymyr A. Gnatyuk, Volodymyr A. Gnatyuk, Bogdan L. Gorkovenko, Bogdan L. Gorkovenko, Olena S. Gorodnychenko, Olena S. Gorodnychenko, Peter E. Mozol', Peter E. Mozol', Aleksandr I. Vlasenko, Aleksandr I. Vlasenko, } "Photosensitization of CdxHg1-xTe epitaxial films by laser-induced shock wave", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368398; https://doi.org/10.1117/12.368398
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