4 November 1999 Pinning of the Fermi level in A2B6 semiconductors
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Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999); doi: 10.1117/12.368381
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine
Abstract
The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.
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Vladimir N. Babentsov, "Pinning of the Fermi level in A2B6 semiconductors", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368381; https://doi.org/10.1117/12.368381
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KEYWORDS
Semiconductors

Cadmium

Etching

Heterojunctions

Luminescence

Cadmium sulfide

Data modeling

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