4 November 1999 Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method
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Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999); doi: 10.1117/12.368405
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine
Abstract
In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.
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Valery A. Voronin, Sergey K. Guba, Marina A. Litvin, "Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368405; https://doi.org/10.1117/12.368405
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KEYWORDS
Gallium arsenide

Absorption

Epitaxy

Temperature metrology

Molecules

Transmittance

Chemical vapor deposition

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