4 November 1999 Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe
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Abstract
The stimulated emission of far IR radiation from uniaxially strained gapless Hg1-xCdxTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.
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S. G. Gasan-Zade, G. A. Shepelskii, S. V. Staryj, M. V. Strikha, Fedir T. Vasko, "Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368374; https://doi.org/10.1117/12.368374
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