4 November 1999 Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence
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Abstract
On the example of the PbTe and Pb077Sn023Te on BaF2 the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF2 substrates.
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Nicolas N. Berchenko, Vitaliy S. Yakovyna, Alexander Yu. Nikiforov, Hans Zogg, "Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368359; https://doi.org/10.1117/12.368359
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