Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence

Nicolas N. Berchenko; Vitaliy S. Yakovyna; Alexander Yu. Nikiforov; Hans Zogg

doi:10.1117/12.368359

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4 November 1999 Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence

Nicolas N. Berchenko; Vitaliy S. Yakovyna; Alexander Yu. Nikiforov; Hans Zogg

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Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368359
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

On the example of the PbTe and Pb₀₇₇Sn₀₂₃Te on BaF₂ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF₂ substrates.

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Nicolas N. Berchenko, Vitaliy S. Yakovyna, Alexander Yu. Nikiforov, and Hans Zogg "Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368359

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